SI4559EY datasheet(1/6 Pages) VISHAY

部件名	SI4559EY

功能描述	N-Channel 60-V (D-S), 175째C MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si4559EY

Vishay Siliconix

Document Number: 70167

S-57253—Rev. D, 24-Feb-98

www.vishay.com

S FaxBack 408-970-5600

2-1

N-Channel 60-V (D-S), 175

°C MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

N-Channel

60

0.055 @ VGS = 10 V

"4.5

N-Channel

60

0.075 @ VGS = 4.5 V

"3.9

P-Channel

–60

0.120 @ VGS = –10 V

"3.1

P-Channel

–60

0.150 @ VGS = –4.5 V

"2.8

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

D1 D1

G1

S1

S2

G2

D2 D2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

60

–60

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 175_C)a

TA = 25_C

ID

"4.5

"3.1

A

Continuous Drain Current (TJ = 175_C)a

TA = 70_C

ID

"3.8

"2.6

A

Pulsed Drain Current

IDM

"30

A

Continuous Source Current (Diode Conduction)a

IS

2.0

–2.0

Maximum Power Dissipationa

TA = 25_C

PD

2.4

W

Maximum Power Dissipationa

TA = 70_C

PD

1.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P- Channel

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 10 sec.

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