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1N5402G 数据表(PDF) 1 Page - Diode Semiconductor Korea |
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1N5402G 数据表(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES The plastic package carries underwrites laboratory flammabilityclassification 94V-O High current capability Low reverse leakage MECHANICAL DATA Case:JEDEC DO--27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces,1.15 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%. 1N 5402G 1N 5403G 1N 5404G 1N 5405G 1N 5406G 1N 5407G 1N 5408G UNITS Maximumrecurrent peak reverse voltage VRRM 200 300 400 500 600 800 1000 V MaximumRMS voltage VRMS 140 210 280 350 420 560 700 V MaximumDCblocking voltage VDC 200 300 400 500 600 800 1000 V Maximumaverage forward rectified current 9.5mmlead length, @T A= 75 Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @T J=125 Maximuminstantaneous forward voltage at 3.0 A VF V Maximumreverse current @T A=25 at rated DCblocking voltage @T A=100 Typical junction capacitance (Note1) CJ pF Typical thermal Resistance (Note2) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 100 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A 35 50 DO - 27 High temperature soldering guaranteed: vvvvv350 /10 seconds, 0.375"(9.5mm) lead length, wwc5lbs, (2.3kg) tension 1N5400G --- 1N5408G GLASS PASSIVATED RECTIFIERS NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. - 55 ---- + 175 - 55 ---- + 175 IR 20.0 A 10.0 Glass passivated junction IF(AV) 3.0 Low forward voltage drop A 200.0 IFSM 35.0 1N 5400G 1N 5401G 50 100 1.1 2.Thermal Resistance Junction Ambient. A 100.0 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
类似零件编号 - 1N5402G |
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类似说明 - 1N5402G |
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