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TC281-30 数据表(PDF) 7 Page - Texas Instruments |
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TC281-30 数据表(HTML) 7 Page - Texas Instruments |
7 / 18 page TC281 1036- × 1010-PIXEL CCD IMAGE SENSOR SOCS058D – JUNE 1996 – REVISED MARCH 2003 7 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 advanced lateral overflow drain (continued) Applying a 10-V pulse for a minimum duration of 1 µs above the nominal dc bias level causes the charge in the image area to be completely cleared. This feature permits a precise control of the integration time on a frame-by-frame basis. The single-pulse clear capability also reduces smear by eliminating accumulated charge from the pixels before the start of the integration (single-sided smear). Application of a negative 2-V pulse during the parallel transfer is recommended to prevent possible artifacts resulting from slight column-to-column pixel well capacity variations. storage area A metal light shield covers the storage area to prevent a further integration of charge when charge is being stored before readout. To use the sensor in a single-shot mode after being dormant for a long period of time, you must perform multiple storage area clears to ensure the complete charge removal (see Figure 4). serial register The serial register shifts the data out of the sensor area at a maximum rate of 40 MHz, thus achieving a 1000 x 1000 pixel readout with the frame rate of 30 frames per second. The data is shifted to the BCD node on the falling edge of the SRG clocking pulses. The data can also be transferred out of the serial registers in a parallel direction to the clear drain. This allows partial line readouts. The timing for this operating mode consists of transferring the next row from the storage into the serial register while also clocking the TRG. Binning of multiple pixels within a column to increase the device sensitivity can be performed by multiple line transfers into the serial register prior to the register readout. The timing for this mode of operation is shown in Figure 5. Care must be taken not to exceed the well capacity of the serial register by transferring too many lines into it. Horizontal binning is also possible in this sensor. It can be accomplished in the BCD detection node by a suitable skipping of the reset pulses. bulk charge detection node and output amplifier The TC281 image sensor uses a patented TI charge detection device called the bulk charge detection node. In this node, the signal electron packets are transferred under a uniquely designed p-channel MOS transistor where they modulate the transistor threshold voltage. The threshold voltage changes are then detected; they represent the desired output signal. After sensing is completed, charge is removed from the node by applying a reset pulse. One of the key advantages of the BCD charge detection concept is that charge is sensed nondestructively. The nondestructive readout does not generate reset noise, eliminating the need for the CDS post processing. Other advantages are high speed and low noise. Emitter-follower output buffering is recommended for the TI image sensors. TI also recommends that the emitter-follower be ac coupled to the rest of the signal processing chain. ac coupling eliminates problems with the sensor output dc stability and the sensor-to-sensor dc output level variations. |
类似零件编号 - TC281-30 |
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类似说明 - TC281-30 |
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