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LM57-Q1 数据表(PDF) 29 Page - Texas Instruments |
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LM57-Q1 数据表(HTML) 29 Page - Texas Instruments |
29 / 38 page J A JA DD Q DD TEMP L 7 7 5 9 , 9 ±9 , T ª º ¬ ¼ GND SENSE1 SENSE2 VTEMP TOVER VIA to ground plane VIA to power plane VDD TRIP TEST TOVER 0.1 µ F RSENSE1 RSENSE2 LM57-Q1 www.ti.com SNIS191A – JULY 2015 – REVISED JULY 2015 10.2 Layout Example Figure 25. PW (TSSOP) Package Layout Example 10.3 Temperature Considerations The junction temperature of the LM57-Q1 is the actual temperature being measured. The thermal resistance junction-to-ambient (RθJA) is the parameter (from ) used to calculate the rise of a device junction temperature due to its power dissipation. Equation 3 is used to calculate the rise in the die temperature of the LM57-Q1. where • TA is the ambient temperature. • IQ is the quiescent current. • IL is the load current on VTEMP. • RθJA can be found in (3) For example using an LM57-Q1 in the PW (TSSOP) package, in an application where TA = 30°C, VDD = 5.5 V, IDD = 28 μA, J5 gain, VTEMP = 2368 mV, and IL = 0 μA, the total temperature rise would be [183°C/W × 5.5 V × 28 μA] = 0.028°C. To minimize self-heating, the load current on VTEMP should be minimized. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 29 Product Folder Links: LM57-Q1 |
类似零件编号 - LM57-Q1 |
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类似说明 - LM57-Q1 |
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