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SUP75N06-08 数据表(PDF) 1 Page - Vishay Siliconix |
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SUP75N06-08 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SUP/SUB75N06-08 Vishay Siliconix Document Number: 70283 S-05111—Rev. F, 10-Dec-01 www.vishay.com 2-1 N-Channel 60-V (D-S), 175 _C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D G S N-Channel MOSFET TO-220AB Top View GD S DRAIN connected to TAB TO-263 S D G Top View SUP75N06-08 SUB75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V Continuous Drain Current TC = 25_C 75a Continuous Drain Current (TJ = 175_C) TC = 125_C ID 55 Pulsed Drain Current IDM 240 A Avalanche Current IAR 60 Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ TC = 25_C (TO-220AB and TO-263) 250c Power Dissipation TA = 25_C (TO-263)d PD 3.7 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit PCB Mount (TO-263)d 40 Junction-to-Ambient Free Air (TO-220AB) RthJA 62.5 _C/W Junction-to-Case RthJC 0.6 C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm |
类似零件编号 - SUP75N06-08 |
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类似说明 - SUP75N06-08 |
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