December 2000

2001 Fairchild Semiconductor Corporation

FDD6680S Rev D(W)

FDD6680S

30V N-Channel PowerTrench

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

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General Description

The FDD6680S is designed to replace a single

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

an

integrated

Schottky

diode

using

Fairchild’s

monolithic SyncFET technology.

The performance of

the FDD6680S as the low-side switch in a synchronous

rectifier is indistinguishable from the performance of the

FDD6680A in parallel with a Schottky diode.

Applications

• DC/DC converter

• Motor Drives

Features

• 55 A, 30 V

Ω @ V

Ω @ V

• Includes SyncFET Schottky body diode

• Low gate charge (17nC typical)

• High performance trench technology for extremely

• High power and current handling capability

.

G

S

D

TO-252

S

G

D

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

– Continuous

(Note 3)

55

A

– Pulsed

(Note 1a)

100

Power Dissipation

(Note 1)

60

(Note 1a)

3.1

(Note 1b)

1.3

W

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

2.1

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

40

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1b)

96

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD6680S

FDD6680S

13’’

16mm

2500 units