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LM3212_16 Datasheet(数据表) 4 Page - Texas Instruments

部件型号  LM3212_16
说明  Step-Down DC-DC Converter
下载  25 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
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LM3212
SNOSB37C – DECEMBER 2008 – REVISED APRIL 2013
www.ti.com
ELECTRICAL CHARACTERISTICS
(1) (2) (3)
Limits in standard typeface are for TA = TJ = 25°C. Limits in boldface type apply over the full operating ambient temperature
range (
−30°C ≤ TA = TJ ≤ +85°C). Unless otherwise noted, all specifications apply to the Typical Application Circuit (page 1)
with: PVIN = VDD = AUTO_BY = EN = 3.6V.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VCON = 0.20V, VIN ≤ 4.2V
(3)
0.465
0.5
0.535
Feedback voltage at minimum
VFB, MIN
V
setting
VCON = 0.32V, VIN =< 5.5V
(3)
0.765
0.8
0.835
VFB, MAX
Feedback voltage at maximum
VCON = 1.36V, VIN = 3.9V
(3)
3.325
3.4
3.475
V
setting
ISHDN
Shutdown supply current
EN = SW = VCON = 0V(4)
0.02
4
µA
Iq
DC bias current into VDD
VCON = 0V, FB = 0V
0.85
0.905
mA
No Switching(5)
RDSON(P)
Pin-pin resistance for large PFET
ISW = 200 mA, VCON = 0.6V
120
96
m
150
RDSON(P)
Pin-pin resistance for small PFET
ISW = 200 mA, VCON = 0.42V
380
312
m
450
RDSON(N)
Pin-pin resistance for NFET
ISW = −200 mA, VCON = 0.1V
135
110
m
165
RACB
Active Current Assist Bypass
VCON = 1V, max value at VIN = 3.1V &
37
53
m
Resistance
IACB = 200 mA
ILIM,PSteady-State
Positive steady-state peak current
VCON = 0.6V(6)
1340
1450
1650
mA
limit
ILIM, P_ACB, GSM
Positive Active Current Assist
VCON = 0.6V, VACB = 3V
(6)
1400
1600
1750
mA
peak current limit
ILIM, NFET
NFET Switch negative peak
VCON = 1V(6)
-1125
-1000
-875
mA
current limit
ILIM, N_ACB, GSM
Active Current Assist negative
VCON = 1V, VACB = 1.5V
(6)
−2300
−1900
mA
peak current limit
FOSC
Internal oscillator frequency
1.44
1.6
1.76
MHz
VIH_AUTO_BY, EN
Logic high input threshold
1.2
V
VIL_AUTO_BY,EN
Logic low input threshold
0.5
V
IPIN_EN
Pin pull down current
5
10
µA
IPIN_AUTO_BY
Pin pull up current
−10
−5
µA
VCON, ON
VCON Threshold for turning on
0.1
0.15
V
switches
ICON
VCON pin leakage current
VCON = 1.0V
−1
1
µA
Gain
VCON to VOUT Gain
0.20V
≤ VCON ≤ 1.36V
2.5
V/V
(1)
All voltages are with respect to the potential at the GND pins. The LM3212 is designed for mobile phone applications where turn-on after
power-up is controlled by the system controller and where requirements for a small package size overrule increased die size for internal
Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds
2.7V.
(2)
Min and Max limits are ensured by design, test, or statistical analysis. Typical numbers are not ensured, but do represent the most likely
norm. Due to the pulsed nature of the testing TA = TJ for the electrical characteristics table.
(3)
The parameters in the electrical characteristics table are tested under open loop conditions at PVIN = VDD = 3.6V. For performance over
the input voltage range and closed-loop results, refer to the datasheet curves.
(4)
Shutdown current includes leakage current of PFET.
(5)
IQ specified here is when the part is not switching. For operating input current at no load, refer to datasheet curves.
(6)
Current limit is built-in, fixed, and not adjustable.
4
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Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: LM3212




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