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CSD23381F4 数据表(PDF) 1 Page - Texas Instruments |
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CSD23381F4 数据表(HTML) 1 Page - Texas Instruments |
1 / 13 page D G S 0.35 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23381F4 SLPS450E – OCTOBER 2013 – REVISED MAY 2015 CSD23381F4 12 V P-Channel FemtoFET™ MOSFET 1 Features Product Summary 1 • Ultra-Low On-Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage –12 V • High Operating Drain Current Qg Gate Charge Total (–4.5 V) 1140 pC Qgd Gate Charge Gate-to-Drain 190 pC • Ultra-Small Footprint (0402 Case Size) VGS = –1.8 V 480 m Ω – 1.0 mm × 0.6 mm Drain-to-Source On- RDS(on) VGS = –2.5 V 250 m Ω Resistance • Ultra-Low Profile VGS = –4.5 V 150 m Ω – 0.35 mm Max Height VGS(th) Threshold Voltage –0.95 V • Integrated ESD Protection Diode – Rated >4 kV HBM . Ordering Information(1) – Rated >2 kV CDM Device Qty Media Package Ship • Lead and Halogen Free CSD23381F4 3000 Femto(0402) 7-Inch Tape and • RoHS Compliant 1.0 mm x 0.6 mm Reel Reel CSD23381F4T 250 Land Grid Array (LGA) 2 Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Load Switch Applications • Optimized for General Purpose Switching . Applications Absolute Maximum Ratings TA = 25°C VALUE UNIT • Battery Applications VDS Drain-to-Source Voltage –12 V • Handheld and Mobile Applications VGS Gate-to-Source Voltage –8 V ID Continuous Drain Current(1) –2.3 A 3 Description IDM Pulsed Drain Current(2) –9 A This 150 m Ω, 12 V P-Channel FemtoFET™ MOSFET Continuous Gate Clamp Current –35 is designed and optimized to minimize the footprint in IG mA Pulsed Gate Clamp Current(2) –350 many handheld and mobile applications. This PD Power Dissipation(1) 500 mW technology is capable of replacing standard small signal MOSFETs while providing at least a 60% Human Body Model (HBM) 4 kV V(ESD) reduction in footprint size. Charged Device Model (CDM) 2 kV TJ, Operating Junction and . –55 to 150 °C Tstg Storage Temperature Range (1) Typical RθJA = 85°C/W on 1 inch 2 (6.45 cm2), 2 oz. Typical Part Dimensions (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Pulse duration ≤300 μs, duty cycle ≤2% Top View . . . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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类似说明 - CSD23381F4 |
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