CSD19532Q5B_16 datasheet(5/14 Pages) TI1

部件名	CSD19532Q5B

功能描述	100V N-Channel NexFET Power MOSFET

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制造商	TI1 [Texas Instruments]

网页	http://www.ti.com

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1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

8

10

12

14

16

18

20

VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 17A

TC = 125°C,I D = 17A

G001

0

1

2

3

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5

6

7

8

9

10

0

5

10

15

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25

30

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40

45

50

Qg - Gate Charge (nC)

ID = 17A

VDS = 50V

G001

1

10

100

1000

10000

0

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50

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100

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

0

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0

0.2

0.4

0.6

0.8

1

1.2

1.4

VDS - Drain-to-Source Voltage (V)

VGS = 10V

VGS = 8V

VGS = 6V

G001

0

20

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0

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VGS - Gate-to-Source Voltage (V)

TC = 125°C

TC = 25°C

TC = −55°C

VDS = 5V

G001

CSD19532Q5B

www.ti.com

SLPS414A – DECEMBER 2013 – REVISED JUNE 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

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Product Folder Links: CSD19532Q5B

类似零件编号 - CSD19532Q5B_16

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Texas Instruments	CSD19532Q5B	1Mb / 13P	[Old version datasheet] 100 V N-Channel NexFET Power MOSFET
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CSD19532Q5B 数据表(PDF) 5 Page - Texas Instruments

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CSD19532Q5B 数据表(PDF) 5 Page - Texas Instruments

CSD19532Q5B 数据表(HTML) 5 Page - Texas Instruments

类似零件编号 - CSD19532Q5B_16

类似说明 - CSD19532Q5B_16

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