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CSD18534Q5AT 数据表(PDF) 1 Page - Texas Instruments |
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CSD18534Q5AT 数据表(HTML) 1 Page - Texas Instruments |
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1 / 13 page  0 4 8 12 16 20 24 28 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 14A TC = 125ºC Id = 14A G001 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 Qg - Gate Charge (nC) ID = 14A VDS = 30V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18534Q5A SLPS389D – OCTOBER 2012 – REVISED JUNE 2015 CSD18534Q5A 60 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-source voltage 60 V • Avalanche Rated Qg Gate charge total (10 V) 17 nC Qgd Gate charge gate-to-drain 3.5 nC • Logic Level VGS = 4.5 V 9.9 m Ω • Pb Free Terminal Plating RDS(on) Drain-to-source on-resistance VGS = 10 V 7.8 m Ω • RoHS Compliant VGS(th) Threshold voltage 1.9 V • Halogen Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP 2 Applications CSD18534Q5A 2500 13-Inch Reel SON 5 mm × 6 mm Tape and Plastic Package Reel • DC-DC Conversion CSD18534Q5AT 250 7-Inch Reel • Secondary Side Synchronous Rectifier (1) For all available packages, see the orderable addendum at the end of the data sheet. • Isolated Converter Primary Side Switch • Motor Control Absolute Maximum Ratings TA = 25°C VALUE UNIT 3 Description VDS Drain-to-source voltage 60 V This 7.8 m Ω, 60 V, SON 5 × 6 mm NexFET™ power VGS Gate-to-source voltage ±20 V MOSFET is designed to minimize losses in power Continuous drain current (package limited) 50 conversion applications. Continuous drain current (silicon limited), TC ID 69 A = 25°C Top View Continuous drain current, TA = 25°C (1) 13 IDM Pulsed drain current, TA = 25°C (2) 229 A Power dissipation(1) 3.1 PD W Power dissipation, TC = 25°C 77 TJ, Operating junction, –55 to 150 °C Tstg Storage temperature Avalanche energy, single pulse EAS 80 mJ ID = 40 A, L = 0.1mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - CSD18534Q5AT |
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类似说明 - CSD18534Q5AT |
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