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CSD18503Q5AT 数据表(PDF) 1 Page - Texas Instruments |
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CSD18503Q5AT 数据表(HTML) 1 Page - Texas Instruments |
1 / 13 page VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 D007 TC = 25°C, I D = 22 A TC = 125°C, I D = 22 A Qg - Gate Charge (nC) 0 5 10 15 20 25 30 0 2 4 6 8 10 D004 ID = 22 A VDS = 20 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18503Q5A SLPS358C – JUNE 2012 – REVISED JUNE 2015 CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-source voltage 40 V • Avalanche Rated Qg Gate charge total (4.5 V) 13 nC Qgd Gate charge gate-to-drain 4.3 nC • Logic Level VGS = 4.5 V 4.7 m Ω • Pb Free Terminal Plating RDS(on) Drain-to-source on-resistance VGS = 10 V 3.4 m Ω • RoHS Compliant VGS(th) Threshold voltage 1.8 V • Halogen Free • SON 5 mm × 6 mm Plastic Package Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP 2 Applications CSD18503Q5A 2500 13-Inch Reel SON 5 mm × 6 mm Tape and Plastic Package Reel • DC-DC Conversion CSD18503Q5AT 250 7-Inch Reel • Secondary Side Synchronous Rectifier (1) For all available packages, see the orderable addendum at the end of the data sheet. • Battery Motor Control Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 40 V, 3.4 m Ω, 5 x 6 mm SON NexFET™ power VDS Drain-to-source voltage 40 V MOSFET is designed to minimize losses in power VGS Gate-to-source voltage ±20 V conversion applications. Continuous drain current (package limited), 100 TC = 25°C Top View ID Continuous drain current (silicon limited), TC A 121 = 25°C Continuous drain current, TA = 25°C (1) 19 IDM Pulsed drain current, TA = 25°C (2) 321 A Power dissipation(1) 3.1 PD W Power dissipation, TC = 25°C 120 TJ, Operating junction, –55 to 150 °C Tstg Storage temperature Avalanche energy, single pulse EAS 157 mJ ID = 56 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 Text added for spacing inch thick FR4 PCB. (2) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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类似说明 - CSD18503Q5AT |
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