CSD17579Q5A_16 datasheet(3/13 Pages) TI1

部件名	CSD17579Q5A

功能描述	30V N-Channel NexFET Power MOSFETs

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制造商	TI1 [Texas Instruments]

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CSD17579Q5A

www.ti.com

SLPS524 – MARCH 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

30

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 24 V

1

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20 V

100

nA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

1.0

1.5

2.0

V

VGS = 4.5 V, ID = 8 A

11.6

13.3

m

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V, ID = 8 A

8.4

9.7

m

Ω

gƒs

Transconductance

VDS = 3 V, ID = 8 A

36

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

796

1030

pF

Coss

Output Capacitance

VGS = 0 V, VDS = 15 V, ƒ = 1 MHz

95

124

pF

Crss

Reverse Transfer Capacitance

40

52

pF

RG

Series Gate Resistance

1.9

3.8

Ω

Qg

Gate Charge Total (4.5 V)

5.4

7

nC

Qg

Gate Charge Total (10 V)

11.6

15.1

nC

Qgd

Gate Charge Gate-to-Drain

VDS = 15 V, ID = 8 A

1.2

nC

Qgs

Gate Charge Gate-to-Source

2.3

nC

Qg(th)

Gate Charge at Vth

1.1

nC

Qoss

Output Charge

VDS = 15 V, VGS = 0 V

2.9

nC

td(on)

Turn On Delay Time

3

ns

tr

Rise Time

7

ns

VDS = 15 V, VGS = 10 V,

IDS = 8 A, RG = 0 Ω

td(off)

Turn Off Delay Time

13

ns

tƒ

Fall Time

1

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 8 A, VGS = 0 V

0.8

1.0

V

Qrr

Reverse Recovery Charge

4.2

nC

VDS= 15 V, IF = 8 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

5.7

ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance (1)

4.3

°C/W

RθJA

Junction-to-Ambient Thermal Resistance(1)(2)

50

(1)

RθJC is determined with the device mounted on a 1 inch

2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5 inches

(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board

design.

(2)

Device mounted on FR4 material with 1 inch2 (6.45-cm2), 2 oz. (0.071 mm thick) Cu.

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