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CSD17570Q5B 数据表(PDF) 1 Page - Texas Instruments |
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CSD17570Q5B 数据表(HTML) 1 Page - Texas Instruments |
1 / 13 page 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 50A TC = 125°C,I D = 50A G001 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 Qg - Gate Charge (nC) ID = 50A VDS = 15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17570Q5B SLPS471C – FEBRUARY 2014 – REVISED FEBRUARY 2015 CSD17570Q5B 30 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Resistance TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 30 V • Avalanche Rated Qg Gate Charge Total (4.5 V) 93 nC Qgd Gate Charge Gate-to-Drain 34 nC • Pb Free Terminal Plating VGS = 4.5 V 0.74 m Ω • RoHS Compliant RDS(on) Drain-to-Source On-Resistance VGS = 10 V 0.56 m Ω • Halogen Free VGS(th) Threshold Voltage 1.5 V • SON 5 mm × 6 mm Plastic Package Ordering Information(1) 2 Applications Device Qty Media Package Ship • ORing and Hot Swap Applications CSD17570Q5B 2500 13-Inch Reel SON 5 × 6 mm Tape and Plastic Package Reel CSD17570Q5BT 250 7-Inch Reel 3 Description (1) For all available packages, see the orderable addendum at This 30 V, 0.56 m Ω, SON 5 × 6 mm NexFET™ power the end of the data sheet. MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended Absolute Maximum Ratings for switching applications. TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V Top Icon VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), ID 407 A TC = 25°C Continuous Drain Current, TA = 25°C (1) 53 IDM Pulsed Drain Current, TA = 25°C (2) 400 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 450 mJ ID = 90 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1 inch 2 , 2 oz. Cu pad on a . 0.06 inch thick FR4 PCB. . (2) Pulse duration ≤100 μs, duty cycle ≤2% . . RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - CSD17570Q5B |
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类似说明 - CSD17570Q5B |
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