IRF333 datasheet(2/2 Pages) ISC

部件名	IRF333

功能描述	isc N-Channel MOSFET Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel Mosfet Transistor

IRF333

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID= 0.25mA

350

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

2

4

V

RDS(ON)

Drain-Source

On-stage

Resistance

VGS= 10V; ID= 3.0A

1.5

Ω

IGSS

Gate Source Leakage Current

VGS= ±20V; VDS= 0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 350V; VGS= 0

250

uA

VSD

Diode Forward Voltage

IF= 5.5A; VGS= 0

1.6

V

Ciss

Input Capacitance

VDS=25V,VGS=0V,

F=1.0MHz

700

pF

Coss

Output Capacitance

150

pF

Crss

Reverse Transfer Capacitance

40

pF

·SWITCHING CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

Td(on)

Turn-on Delay Time

VDD=200V,ID=5.5A

RG=12Ω

11

17

ns

Tr

Rise Time

20

29

ns

Td(off)

Turn-off Delay Time

35

56

ns

Tf

Fall Time

15

24

ns

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类似零件编号 - IRF333

制造商	部件名	数据表	功能描述
Samsung semiconductor	IRF333	208Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF333	177Kb / 6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V
New Jersey Semi-Conduct...	IRF333	848Kb / 3P	IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs
	IRF333	848Kb / 3P	IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs
	IRF333	848Kb / 3P	N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

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