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IRF321 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF321 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF321 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 350 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 1.8 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=350V; VGS=0 250 uA VSD Diode Forward Voltage IS=3.0A; VGS=0 1.6 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 500 pF Crss Reverse Transfer Capacitance 40 Coss Output Capacitance 100 tr Rise Time VGS=10V; ID=1.5A; VDD=200V; RL=50Ω 50 ns td(on) Turn-on Delay Time 40 tf Fall Time 50 td(off) Turn-off Delay Time 100 PDF pdfFactory Pro www.fineprint.cn |
类似零件编号 - IRF321 |
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类似说明 - IRF321 |
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