2N6661 datasheet(4/4 Pages) VISHAY

部件名	2N6661

功能描述	N-Channel 80-V and 90-V (D-S) MOSFETS

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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4 / 4 page

2N6661/VN88AFD

Vishay Siliconix

www.vishay.com

11-4

Document Number: 70224

S-04279—Rev. C, 16-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

0.1

10 K

1.0

0.01

0.1

1.0

100

10

1 K

Duty Cycle = 0.5

0.2

0.1

Single Pulse

Threshold Region

Capacitance

Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)

Gate Charge

Load Condition Effects on Switching

t1 – Square Wave Pulse Duration (sec)

ID – Drain Current (A)

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (pC)

1. Duty Cycle, D =

2. Per Unit Base = RthJC = 20_C/W

3. TJM – TC = PDMZthJC(t)

t1

t2

t1

Notes:

PDM

t2

125

100

75

0

010

50

25

20

30

40

C oss

C iss

C rss

VGS = 0 V

f = 1 MHz

10

1

0.01

0.5

0.1

1.0

1.5

2.0

25

_C

–55

_C

125

_C

VGS = 5 V

TJ = 150

_C

15.0

12.5

10.0

0

100

500

7.5

5.0

200

300

400

2.5

I D = 1.0 A

VDS = 45 V

72 V

0.1

1

2

100

10

1

VDD = 25 V

RL = 23

W

VGS = 0 to 10 V

ID = 1.0 A

td(on)

td(off)

tr

tf

0.05

0.02

0.01

类似零件编号 - 2N6661

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