IRF305 datasheet(2/2 Pages) ISC

部件名	IRF305

功能描述	Nanosecond Switching Speeds

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel MOSFET Transistor

IRF305

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0; ID=250µA

400

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=10V; ID=3A

0.8

Ω

IGSS

Gate Source Leakage Current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=100V; VGS=0

250

uA

VSD

Diode Forward Voltage

IF=8A; VGS=0

2.5

V

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

450

600

pF

Crss

Reverse Transfer Capacitance

50

100

Coss

Output Capacitance

200

400

tr

Rise Time

RGS=50Ω

ID=4A;

VDD=50V;

RL=50Ω

35

70

ns

td(on)

Turn-on Delay Time

20

40

tf

Fall Time

35

70

td(off)

Turn-off Delay Time

50

100

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