IRF121 datasheet(1/2 Pages) ISC

部件名	IRF121

功能描述	Nanosecond Switching Speeds

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

IRF121

DESCRIPTION

·Drain Current ID=8A@ TC=25℃

·Drain Source Voltage-

: VDSS= 60V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.3Ω(Max)

·Nanosecond Switching Speeds

APPLICATIONS

·Switching power supplies

·Motor controls,Inverters and Choppers

·Audio amplifiers and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

60

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

8

A

Ptot

Total Dissipation@TC=25℃

40

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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类似零件编号 - IRF121

制造商	部件名	数据表	功能描述
Samsung semiconductor	IRF121	213Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF121	166Kb / 5P	N-Channel Power MOSFETs, 11 A, 60-100 V
Intersil Corporation	IRF121	68Kb / 7P	8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
New Jersey Semi-Conduct...	IRF121	798Kb / 3P	IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs
New Jersey Semi-Conduct...	IRF121	798Kb / 3P	N-Channel Power MOSFETs, 11 A, 60-100 V

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