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TVR4J Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  TVR4J
说明  TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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TVR4J Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TVR4J,TVR4N
2002-09-18
1
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
· Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V
· Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C)
· Reverse Recovery Time: trr = 20 µs
· Plastic Mold Type.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
TVR4J
600
Repetitive peak
reverse voltage
TVR4N
VRRM
1000
V
Average forward current (Ta
= 55°C )
IF (AV)
1.2
A
Peak one cycle surge forward current
(non repetitive)
IFSM
100 (50 Hz)
A
Junction temperature
Tj
-40 to 150
°C
Storage temperature range
Tstg
-40 to 150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
VFM
IFM = 5 A
¾
¾
1.2
V
Repetitive peak reverse current
IRRM
VRRM = Rated
¾
¾
10
mA
Reverse recovery time
trr
IF = 20 mA, IR = 1 mA
¾
¾
20
ms
Thermal resistance (junction to ambient)
Rth (j-a)
DC
¾
¾
80
°C/W
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Type Code Lot No.
Cathode Mark
Color: Silver
Month (starting from alphabet A)
Year (last number of the christian era)
Code
Type
VR4J
TVR4J
VR4N
TVR4N




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