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SMP1345 数据表(PDF) 2 Page - Skyworks Solutions Inc.

部件名 SMP1345
功能描述  Very Low Capacitance, Plastic Packaged Silicon PIN Diodes
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制造商  SKYWORKS [Skyworks Solutions Inc.]
网页  http://www.skyworksinc.com
标志 SKYWORKS - Skyworks Solutions Inc.

SMP1345 数据表(HTML) 2 Page - Skyworks Solutions Inc.

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DATA SHEET • SMP1345 SERIES DIODES
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
2
August 6, 2015 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200046S
Electrical and Mechanical Specifications
The absolute maximum ratings of the SMP1345 series are
provided in Table 2. Electrical specifications are provided in
Table 3.
Typical performance characteristics of the SMP1345 series are
illustrated in Figures 1 to 6.
Table 2. SMP1345 Series Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Minimum
Maximum
Units
Reverse voltage
VR
50
V
Power dissipation @ 25
°C lead temperature
PD
250
mW
Storage temperature
TSTG
–65
+150
C
Operating temperature
TA
–65
+150
C
Electrostatic discharge:
Human Body Model (HBM), Class 1B
ESD
1000
V
Note 1: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
CAUTION: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 3. SMP1345 Series Electrical Specifications (Note 1)
(TA = +25
C, Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typical
Max
Units
Reverse current
IR
VR = 50 V
10
μA
Capacitance
CT
F = 1 MHz:
V = 1 V
V = 5 V
0.19
0.18
0.20
pF
pF
Resistance
RS
F = 100 MHz:
I = 1 mA
I = 10 mA
3.5
1.5
2.0
Ω
Ω
Forward voltage
VF
IF = 10 mA
0.89
V
Carrier lifetime
TI
IF = 10 mA
100
ns
I region width
10
μm
Note 1: Performance is guaranteed only under the conditions listed in this table.


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