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BUZ60B 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 BUZ60B
功能描述  SOA is Power Dissipation Limited
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BUZ60B 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUZ60B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUZ60B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
BUZ60B
DESCRIPTION
·4.5A, 400V
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·Linear Transfer Characteristics
·High Input Impedance
·Majority Carrier Device
APPLICATIONS
·applications such as switching regulators, switching
converters, motor drivers,relay drivers, and drivers for
high power bipolar switching transistors requiring high
speed and low gate drive power.
applications such as switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
4.5
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
75
℃/W
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