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BUZ60B 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ60B 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor BUZ60B DESCRIPTION ·4.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device APPLICATIONS ·applications such as switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. applications such as switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 4.5 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W PDF pdfFactory Pro www.fineprint.cn |
类似零件编号 - BUZ60B |
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类似说明 - BUZ60B |
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