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2SK2157C-T1-AZ 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SK2157C-T1-AZ 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK2157C R07DS1264EJ0200 Rev.2.00 Page 2 of 6 Jun 18, 2015 Electrical Characteristics (TA = 25 C) Characteristics Symbol Test Conditions MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 12 V, VDS = 0 V 10 A Gate to Source Cut-off Voltage VGS(off) VDS = 10V, ID = 1 mA 0.5 1.0 1.5 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 2.0 A 1.0 4.9 S Drain to Source On-state Resistance Note RDS(on)1 VGS = 4.5 V, ID = 2.0 A 50 63 m RDS(on)2 VGS = 4.0 V, ID = 2.0 A 52 65 m RDS(on)3 VGS = 2.5 V, ID = 2.0 A 68 91 m Input Capacitance Ciss VDS = 10 V, 260 pF Output Capacitance Coss VGS = 0 V, 60 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 35 pF Turn-on Delay Time td(on) VDD = 10 V, 28 ns Rise Time tr ID = 2 A, 65 ns Turn-off Delay Time td(off) VGS = 4 V, 98 ns Fall Time tf RG = 10 80 ns Total Gate Charge QG ID = 3.5 A, VDD = 24 V, VGS = 4 V 4 nC Body Diode Forward Voltage Note VF(S-D) IF = 3.5 A, VGS = 0 V 0.89 V Note Pulsed Test Circuit Switching Time PG. RG 0 VGS D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% |
类似零件编号 - 2SK2157C-T1-AZ |
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类似说明 - 2SK2157C-T1-AZ |
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