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2SK1916 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1916 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1916 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 450 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 5 V VDF Body to drain diode forward voltage IF = 4 A, VGS = 0 0.92 1.41 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=8A 0.3 0.45 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 500 µA Ciss Input capacitance VDS=25V;VGS=0V;fT=1MHz 1800 2700 pF Crss Reverse transfer capacitance 120 185 Coss Output capacitance 270 410 tr Rise time VGS=10V;ID=18A; VDD=300V; RL=25Ω 100 150 ns ton Turn-on time 70 110 tf Fall time 80 120 toff Turn-off time 250 380 PDF pdfFactory Pro www.fineprint.cn |
类似零件编号 - 2SK1916 |
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类似说明 - 2SK1916 |
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