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4X16E83VTW-6 数据表(PDF) 5 Page - List of Unclassifed Manufacturers |
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4X16E83VTW-6 数据表(HTML) 5 Page - List of Unclassifed Manufacturers |
5 / 9 page 5 Figure 3 OE# Control of DQs V V IH IL CAS# V V IH IL RAS# V V IH IL ADDR ROW COLUMN (A) COLUMN (B) V V IH IL OE# V V IOH IOL OPEN DQ tOD VALID DATA (B) VALID DATA (A) COLUMN (C) VALID DATA (A) tOE VALID DATA (C) COLUMN (D) VALID DATA (D) tOD tOEHC tOD tOEP tOES The DQs go back to Low-Z if tOES is met. The DQs remain High-Z until the next CAS# cycle if tOEHC is met. The DQs remain High-Z until the next CAS# cycle if tOEP is met. Figure 4 WE# Control of DQs V V IH IL CAS# V V IH IL RAS# V V IH IL ADDR ROW COLUMN (A) DON?T CARE UNDEFINED V V IH IL WE# V V IOH IOL OPEN DQ tWPZ The DQs go to High-Z if WE# falls and, if tWPZ is met, will remain High-Z until CAS# goes LOW with WE# HIGH (i.e., until a READ cycle is initiated). V V IH IL OE# VALID DATA (B) tWHZ WE# may be used to disable the DQs to prepare for input data in an EARLY WRITE cycle. The DQs will remain High-Z until CAS# goes LOW with WE# HIGH (i.e., until a READ cycle is initiated). tWHZ COLUMN (D) VALID DATA (A) COLUMN (B) COLUMN (C) INPUT DATA (C) 4 MEG x 16 EDO DRAM |
类似零件编号 - 4X16E83VTW-6 |
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类似说明 - 4X16E83VTW-6 |
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