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IRF5801PBF-1 数据表(PDF) 1 Page - International Rectifier |
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IRF5801PBF-1 数据表(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET Notes through are on page 8 TSOP-6 Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance 3 2 1 G D D S D 4 5 6 D IRF5801PbF-1 VDS 200 V RDS(on) max (@VGS = 10V) 2.20 Ω Qg (typical) 3.9 nC ID (@TA = 25°C) 0.6 A Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 0.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 0.48 A IDM Pulsed Drain Current 4.8 PD @TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 9.6 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Features Benefits Industry-standard pinout TSOP-6 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability Form Quantity IRF5801TRPbF-1 TSOP-6 Tape and Reel 3000 IRF5801TRPbF-1 Package Type Standard Pack Orderable Part Number Base Part Number 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 15, 2014 |
类似零件编号 - IRF5801PBF-1 |
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类似说明 - IRF5801PBF-1 |
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