SI9407AEY datasheet(2/4 Pages) VISHAY

部件名	SI9407AEY

功能描述	P-Channel 60-V (D-S), 175C MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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2 / 4 page

Si9407AEY

Vishay Siliconix

www.vishay.com

S FaxBack 408-970-5600

2-2

Document Number: 70742

S-99445—Rev. C, 29-Nov-99

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –-60 V, VGS = 0 V

–1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = –-60 V, VGS = 0 V, TJ = 55_C

–10

mA

On-State Drain Currentb

ID(on)

VDS v –5 V, VGS = –10 V

–20

A

Drain-Source On-State Resistanceb

rDS(on)

VGS = –10 V, ID = 3.5 A

0.120

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = –4.5 V, ID = 3.1 A

0.150

W

Forward Transconductanceb

gfs

VDS = –15 V, ID = –3.5 A

8

S

Diode Forward Voltageb

VSD

IS = –2.5 A, VGS = 0 V

–1.2

V

Dynamica

Total Gate Charge

Qg

V30 V V

10 V I

3 5 A

18

30

C

Gate-Source Charge

Qgs

VDS = –30 V, VGS = –10 V, ID = –3.5 A

5

nC

Gate-Drain Charge

Qgd

2

Turn-On Delay Time

td(on)

V30 V R

30

W

8

15

Rise Time

tr

VDD = –30 V, RL = 30 W

I

1 A V

10 V R

6

W

10

20

Turn-Off Delay Time

td(off)

DD

,

L

ID ^ –1 A, VGEN = –10 V, RG = 6 W

35

50

ns

Fall Time

tf

12

25

Source-Drain Reverse Recovery Time

trr

IF = –2.5 A, di/dt = 100 A/ms

70

100

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

类似零件编号 - SI9407AEY

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VBsemi Electronics Co.,...	SI9407AEY-T1-E3	1Mb / 9P	P-Channel 60 V (D-S) MOSFET

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