2SC3789 datasheet(2/2 Pages) ISC

部件名	2SC3789

功能描述	Complement to Type 2SA1479

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

2

isc Silicon NPN Power Transistor

2SC3789

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10μA; IE= 0

300

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA; RBE= ∞

300

V

V(BR)EBO

Emitter-Base Breakdown Vltage

IE= 10μA; IC= 0

5

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 20mA; IB= 2mA

0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 20mA; IB= 2mA

1.0

V

ICBO

Collector Cutoff Current

VCB= 200V; IE= 0

0.1

μA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

0.1

μA

hFE

DC Current Gain

IC= 10mA; VCE= 10V

40

320

fT

Current-Gain—Bandwidth Product

IC= 10mA; VCE= 30V

70

MHz

COB

Output Capacitance

IE= 0; VCB= 30V, ftest= 1MHz

2.6

pF



hFE Classifications

C

D

E

F

40-80

60-120

100-200

160-320

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