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ST16N10 数据表(PDF) 1 Page - Stanson Technology |
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ST16N10 数据表(HTML) 1 Page - Stanson Technology |
1 / 6 page ST16N10 N Channel Enhancement Mode MOSFET 12.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST16N10 2009. V1 DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION TO-252 PART MARKING Y: Year Code A: Date Code B: Wafer Code FEATURE l 100V/12.0A, RDS(ON) = 160mΩ(Typ) @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252 Package design |
类似零件编号 - ST16N10 |
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类似说明 - ST16N10 |
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