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ST03N20 数据表(PDF) 1 Page - Stanson Technology

部件名 ST03N20
功能描述  SOT-89 package design
Download  6 Pages
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制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology

ST03N20 数据表(HTML) 1 Page - Stanson Technology

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ST03N20
N Channel Enhancement Mode MOSFET
1.9A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2008, Stanson Corp.
ST03N20 2014. V1
DESCRIPTION
ST03N20 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
PIN CONFIGURATION
SOT-89-3L
0320 : Product Code
A
: Date Code
FEATURE
!
200V/2A, RDS(ON) = 850m
@VGS = 10V
!
Super high density cell design for
extremely low RDS(ON)
!
Exceptional on-resistance and
maximum DC current capability
!
SOT-89 package design


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