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SN74CBTU4411ZSTR 数据表(PDF) 6 Page - Texas Instruments

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部件名 SN74CBTU4411ZSTR
功能描述  Multiplexer/Demultiplexer
Download  21 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

SN74CBTU4411ZSTR 数据表(HTML) 6 Page - Texas Instruments

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6
SN74CBTU4411
SCDS192A – APRIL 2005 – REVISED FEBRUARY 2016
www.ti.com
Product Folder Links: SN74CBTU4411
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to ground unless otherwise specified.
(3)
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4)
VI and VO are used to denote specific conditions for VI/O.
(5)
II and IO are used to denote specific conditions for II/O.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VDD
Supply voltage
–0.5
2.5
V
VIN
Control input voltage(2)(3)
–0.5
2.5
V
VI/O
Switch I/O voltage(2)(3)(4)
–0.5
2.5
V
IIK
Control input clamp current
VIN < 0 or VIN > 0
±50
mA
II/OK
I/O port clamp current
VI/O < 0 or VI/O > 0
±50
mA
II/O
ON-state switch current(5)
±100
mA
Continuous current through VDD or GND pins
±100
mA
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±750
(1)
All unused control inputs of the device must be held at VDD or GND to ensure proper device operation. See the TI application report,
Implications of Slow or Floating CMOS Inputs (SCBA004).
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
NOM
MAX
UNIT
VDD
Supply voltage
1.7
1.8
1.9
V
VREF
Reference supply voltage
0.49 × VDD
0.5 × VDD
0.51 × VDD
V
VBIAS
BIAS supply voltage
0
0.3 × VDD
0.33 × VDD
V
VIH
High-level control input voltage
S
VREF + 250 mV
V
EN, TX, DQS_EN
0.65 × VDD
VIL
Low-level control input voltage
S
VREF – 250 mV
V
EN, TX, DQS_EN
0.35 × VDD
VI/O
Data input/output voltage
0
VDD
V
TA
Operating free-air temperature
0
85
°C


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