1SV322_14 datasheet(1/3 Pages) TOSHIBA

部件名	1SV322

功能描述	TOSHIBA Diode Silicon Epitaxial Planar Type

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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1SV322

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV322

TCXO/VCO

• High capacitance ratio: C1V / C4V = 4.3 (typ.)

• Low series resistance: rs = 0.4 Ω (typ.)

• Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

VR

10

V

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 μA

10

⎯

V

Reverse current

IR

VR = 10 V

⎯

3

nA

Capacitance

C1V

VR = 1 V, f = 1 MHz

26.5

⎯

29.5

pF

Capacitance

C4V

VR = 4 V, f = 1 MHz

6.0

⎯

7.1

pF

Capacitance ratio

C1V / C4V

⎯

4.0

4.3

⎯

Series resistance

rs

VR = 4 V, f = 100 MHz

⎯

0.4

0.8

Ω

Note: Signal level when capacitance is measured: Vsig = 500 mVrms

Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Start of commercial production

1999-03

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制造商	部件名	数据表	功能描述
Toshiba Semiconductor	1SV322	87Kb / 3P	TOSHIBA Diode Silicon Epitaxial Planar Type
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