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DHE1M Datasheet(数据表) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

部件型号  DHE1M
说明  SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
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制造商  CHENDA [Microdiode Electronics (Jiangsu) Co.,Ltd.]
网页  http://www.microdiode.com/en
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DHE1M Datasheet(HTML) 1 Page - Microdiode Electronics (Jiangsu) Co.,Ltd.

   
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SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
Case: JEDEC SOD-123FL molded plastic body over passivated chip
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.0007 ounce, 0.02 grams
Glass passivated device
Ideal for surface mouted applications
FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DHE1B
SYMBOLS
UNITS
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
Low reverse leakage
100
70
100
400
280
400
600
420
600
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
VRRM
VRMS
VDC
I(AV)
IFSM
VF
1.0
25.0
1.4
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at1.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
IR
5.0
100.0
A
µ
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
DHE1A THRU DHE1M
DHE1D DHE1G DHE1J
DHE1M
U1B
U1D
U1G
U1J
U1M
U1K
DHE1K
Maximum reverse recovery time (NOTE 1)
Note:
Operating junction and storage temperature range
R
θJA
TJ,TSTG
180
-50 to +150
C
Typical thermal resistance
°C/W
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
50
ns
50
35
50
U1A
DHE1A
trr
200
140
200
800
560
800
1.0
1.7
1000
700
1000
75
SOD-123FL
2.8±0.1
Cathode Band
Top View
3.7±0.2
0.6±0.25
Dimensions in millimeters
MDD Catalog Number
at Ta=65°C




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