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TCS10SPU 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TCS10SPU 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TCS10SPU 2014-03-01 3 DC Characteristics (Ta = 25°C) Characteristics Symbol Condition VCC (V) Min Typ. Max Unit Hi-Level VOH IOH = −1.0 mA 2.3 to 3.6 VCC x 90% ⎯ ⎯ Output Voltage Lo- Level VOL IOL = 1.0 mA 2.3 to 3.6 ⎯ ⎯ VCC x 10% V 2.3 to 2.7 ⎯ 5.5 9.5 Average Current ICC Current at pulse driving (Note 3, Fig. A) 3.0 to 3.6 ⎯ 8.7 13.2 μA Supply Current Operating Current ICCON Peak current (Note 3, Fig. A) 2.3 to 3.6 ⎯ 0.7 1.3 mA Operating Frequency fopr (Fig. A) 2.3 to 3.6 ⎯ 25 ⎯ Hz Note 3: Supply current is pulsed periodically by internal circuit. Magnetic Characteristics (Ta = 25°C) Characteristics Symbol Condition (Note 4, Fig. B) VCC (V) Min Typ. Max Unit Operating Point BON VOUT = VOL 2.3 to 3.6 ⎯ 1.8 2.5 Releasing Point BOFF VOUT = VOH 2.3 to 3.6 0.3 0.8 ⎯ Magnetic Flux Density Hysteresis BH |BON - BOFF| 2.3 to 3.6 ⎯ 1.0 ⎯ mT Note 4: Uniform magnetic field perpendicularly to the magnetic sensor. (Fig. A) : ICC Characteristics (Fig. B) : Operating Characteristics VOH VOL BH BOFF BON South-Pole North-Pole 0 Magnetic Flux Density (mT) VOUT 1/fopr (fopr=25 Hz) Operating Current (Typ. 0.7 mA) Average Current ( Typ. 5.5 μA) ICC Time (t) Magnetic Field, B Note: Direction of the Magnetic field |
类似零件编号 - TCS10SPU_14 |
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类似说明 - TCS10SPU_14 |
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