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DMG4435SSS-13 Datasheet(数据表) 4 Page - Diodes Incorporated

部件型号  DMG4435SSS-13
说明  P-CHANNEL ENHANCEMENT MODE MOSFET
下载  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
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DMG4435SSS-13 Datasheet(HTML) 4 Page - Diodes Incorporated

   
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DMG4435SSS
Document number: DS32041 Rev. 5 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25
0
25
50
75
100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
T = 25°C
A
10
100
1,000
10,000
0
5
10
15
20
25
30
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Ciss
Crss
Coss
f = 1MHz
0.1
10
100
1,000
10,000
1
010
20
30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
g
Fig. 11 Gate Threshold Voltage vs. Total Gate Charge




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