数据搜索系统,热门电子元器件搜索
  Chinese▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF HTML

DMG4435SSS-13 Datasheet(数据表) 2 Page - Diodes Incorporated

部件型号  DMG4435SSS-13
说明  P-CHANNEL ENHANCEMENT MODE MOSFET
下载  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 

DMG4435SSS-13 Datasheet(HTML) 2 Page - Diodes Incorporated

   
Zoom Inzoom in Zoom Outzoom out
 2 page
background image
DMG4435SSS
Document number: DS32041 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current (Note 5) VGS = -20
Steady State
TA = +25°C
TA = +70°C
ID
-7.3
-5.7
A
t < 10s
TA = +25°C
TA = +70°C
ID
-10
-7.5
A
Pulsed Drain Current (Note 6)
IDM
-80
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
TA = +25°C
PD
2.5
W
TA = +70°C
1.5
W
Thermal Resistance, Junction to Ambient @TA = +25°C
Steady state
RθJA
96.5
°C/W
t < 10s
55
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -1mA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1.0
µA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-1.0
-1.7
-2.5
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
13
16
mΩ
VGS = -20V, ID = -11A
15
20
VGS = -10V, ID = -10A
21
29
VGS = -5V, ID = -5A
Forward Transfer Admittance
|Yfs|
22
S
VDS = -5V, ID = -10A
Diode Forward Voltage
VSD
-0.74
-1.0
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
1614
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
226
pF
Reverse Transfer Capacitance
Crss
214
pF
Gate Resistance
Rg
6.8
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge at 10V
Qg
35.4
nC
VGS = -10V, VDS = -15V, ID = -10A
Total Gate Charge at 5V
Qg
18.9
nC
VGS = -5V, VDS = -15V,
ID = -10A
Gate-Source Charge
Qgs
4.6
nC
Gate-Drain Charge
Qgd
5.7
nC
Turn-On Delay Time
tD(on)
8.6
ns
VDS = -15V, VGS = -10V,
RL = 1.5Ω, RGEN = 3Ω,
Turn-On Rise Time
tr
12.7
ns
Turn-Off Delay Time
tD(off)
44.9
ns
Turn-Off Fall Time
tf
22.8
ns
Notes:
5. Device mounted on 1in. x 1in. FR-4 PCB with 2oz. Copper, and
the testing is based on the
t<10s. The value in any given application depends on the
user’s specific board design.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.




HTML 页

1  2  3  4  5  6 


数据表 下载




链接网址


Privacy Policy
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ]  

关于 Alldatasheet    |   广告服务   |   联系我们   |   隐私政策   |   书签   |   链接交换   |   制造商名单
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl