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DMG4435SSS-13 Datasheet(数据表) 1 Page - Diodes Incorporated

部件型号  DMG4435SSS-13
说明  P-CHANNEL ENHANCEMENT MODE MOSFET
下载  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
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DMG4435SSS-13 Datasheet(HTML) 1 Page - Diodes Incorporated

   
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DMG4435SSS
Document number: DS32041 Rev. 5 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4435SSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
ID
TA = +25°C
-30V
16m
 @ VGS = -20V
-7.3A
20m
 @ VGS = -10V
-6.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Backlighting
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
 Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG4435SSS-13
SO-8
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Top View
Internal Schematic
SO-8
D
S
D
D
D
S
S
G
D
S
G
Equivalent circuit
Chengdu A/T Site
Shanghai A/T Site
= Manufacturer’s Marking
G4435SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
8
5
G4435SS
WW
YY
1
4
8
5
G4435SS
WW
YY
e3




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