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TLP176G 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TLP176G 数据表(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TLP176G 2014-09-22 1 TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET TLP176G Modems In PC Modem−Fax Cards Telecommunications The TOSHIBA TLP176G consists of gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a SOP, which is suitable for surface mount assembly. The TLP176G is suitable for the modem applications which require space savings. • Peak off−state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On−state resistance: 35 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL recognized: UL1577, file No. E67349 • BSI approved : BS EN60065: 2002, certificate No.8753 BS EN60950-1: 2002, certificate No.8754 • SEMKO approved: SS EN60065 SS EN60950 • Option(V4) type TUV approved: DIN EN 60747-5-2 Certificate No.40009351 Pin Configuration (top view) Schematic 1-Form-A 1. : Anode 2. : Cathode 3. : Drain 4. : Drain 2 3 4 1 1 2 3 4 1 2 3 4 Unit in mm JEDEC ― JEITA ― TOSHIBA Weight: 0.1 g (typ.) Start of commercial production 1997/10 |
类似零件编号 - TLP176G_14 |
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类似说明 - TLP176G_14 |
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