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CSD17579Q3AT 数据表(PDF) 1 Page - Texas Instruments |
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CSD17579Q3AT 数据表(HTML) 1 Page - Texas Instruments |
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1 / 13 page  VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 D007 TC = 25°C, I D = 8 A TC = 125°C, I D = 8 A Qg - Gate Charge (nC) 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 8 A, VDS = 15 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17579Q3A SLPS527A – SEPTEMBER 2014 – REVISED JANUARY 2016 CSD17579Q3A 30 V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low RDS(on) VDS Drain-to-Source Voltage 30 V • Low Thermal Resistance Qg Gate Charge Total (4.5 V) 5.3 nC Qgd Gate Charge Gate-to-Drain 1.2 nC • Avalanche Rated VGS = 4.5 V 11.8 m Ω • Pb-Free RDS(on) Drain-to-Source On-Resistance VGS = 10 V 8.7 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.5 V • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package . Ordering Information(1) 2 Applications DEVICE MEDIA QTY PACKAGE SHIP CSD17579Q3A 13-Inch Reel 2500 • Point-of-Load Synchronous Buck Converter for SON 3.3 × 3.3 mm Tape and Plastic Package Reel CSD17579Q3AT 7-Inch Reel 250 Applications in Networking, Telecom, and Computing Systems (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Control FET Applications Absolute Maximum Ratings 3 Description TA = 25°C VALUE UNIT This 30 V, 8.7 m Ω, SON 3.3 mm × 3.3 mm VDS Drain-to-Source Voltage 30 V NexFET™ power MOSFET is designed to minimize VGS Gate-to-Source Voltage ±20 V losses in power conversion applications. Continuous Drain Current (Package limited) 20 Top View Continuous Drain Current (Silicon limited), ID 39 A TC = 25°C Continuous Drain Current(1) 11 IDM Pulsed Drain Current(2) 106 A Power Dissipation(1) 2.5 PD W Power Dissipation, TC = 25°C 29 TJ, Operating Junction Temperature, –55 to 150 °C Tstg Storage Temperature Avalanche Energy, single pulse EAS 14 mJ ID = 17 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 50°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 . inch thick FR4 PCB. . (2) Max RθJC = 5.4 °C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - CSD17579Q3AT |
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类似说明 - CSD17579Q3AT |
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