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CSD17577Q3AT 数据表(PDF) 1 Page - Texas Instruments |
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CSD17577Q3AT 数据表(HTML) 1 Page - Texas Instruments |
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1 / 13 page  0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 16A TC = 125°C,I D = 16A G001 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 Qg - Gate Charge (nC) ID = 16A VDS = 15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 CSD17577Q3A 30 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 30 V • Avalanche Rated Qg Gate Charge Total (4.5 V) 12 nC Qgd Gate Charge Gate-to-Drain 2.5 nC • Pb Free VGS = 4.5 V 5.3 m Ω • RoHS Compliant RDS(on) Drain-to-Source On-Resistance VGS = 10 V 4.0 m Ω • Halogen Free VGS(th) Threshold Voltage 1.4 V • SON 3.3 mm × 3.3 mm Package Ordering Information(1) 2 Applications DEVICE QTY MEDIA PACKAGE SHIP • Point-of-Load Synchronous Buck in Networking, CSD17577Q3A 2500 13-Inch Reel SON 3.3 × 3.3 mm Tape and Telecom, and Computing Systems Plastic Package Reel CSD17577Q3AT 250 7-Inch Reel • Optimized for Control, and Sync FET Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 30 V, 4.0 m Ω, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize TA = 25°C VALUE UNIT resistance in power conversion applications. VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V Top Icon Continuous Drain Current (Package limited) 35 Continuous Drain Current (Silicon limited), ID 83 A TC = 25°C Continuous Drain Current (1) 19 IDM Pulsed Drain Current (2) 239 A Power Dissipation(1) 2.5 PD W Power Dissipation, TC = 25°C 53 TJ, Operating Junction Temperature, –55 to 150 °C Tstg Storage Temperature Avalanche Energy, single pulse EAS 39 mJ ID = 28 A, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 50°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 3.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - CSD17577Q3AT |
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类似说明 - CSD17577Q3AT |
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