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CSD17552Q3A 数据表(PDF) 6 Page - Texas Instruments |
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CSD17552Q3A 数据表(HTML) 6 Page - Texas Instruments |
6 / 13 page 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) Silicon limited Package limited G001 0.01 0.1 1 10 100 1000 5000 0.01 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC Single Pulse Typical RthetaJA =146ºC/W(min Cu) G001 1 10 80 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 −75 −25 25 75 125 175 TC - Case Temperature (ºC) VGS = 4.5V VGS = 10V ID =11A G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 CSD17552Q3A SLPS387B – SEPTEMBER 2012 – REVISED JANUARY 2016 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: CSD17552Q3A |
类似零件编号 - CSD17552Q3A_16 |
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类似说明 - CSD17552Q3A_16 |
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