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3N191 数据表(PDF) 2 Page - Linear Integrated Systems |
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3N191 数据表(HTML) 2 Page - Linear Integrated Systems |
2 / 2 page Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201140 05/15/2014 Rev#A7 ECN# 3N190 3N191 ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS gfs Forward Transconductance4 1500 4000 µS VDS = -15V, ID = -5mA, f = 1kHz gos Output Admittance 300 rds(on) Drain to Source "On" Resistance 300 Ω VDS = -20V, ID = -100µA Crss Reverse Transfer Capacitance 1.0 pF VDS = -15V, ID = -5mA, f = 1MHz Ciss Input Capacitance Output Shorted 4.5 Coss Output Capacitance Input Shorted 3.0 SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS td(on) Turn On Delay Time 15 ns VDD = -15V, ID(on) = -5mA, RG = RL = 1.4kΩ tr Turn On Rise Time 30 toff Turn Off Time 50 NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Per transistor. 3. Pulse: t = 300µs, Duty Cycle ≤ 3% 4. Measured at end points, TA and TB. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. |
类似零件编号 - 3N191 |
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类似说明 - 3N191 |
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