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CSD19506KTTT 数据表(PDF) 3 Page - Texas Instruments |
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CSD19506KTTT 数据表(HTML) 3 Page - Texas Instruments |
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3 / 13 page  3 CSD19506KTT www.ti.com SLPS586 – MARCH 2016 Product Folder Links: CSD19506KTT Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 80 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 64 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 100 A 2.2 2.8 m Ω VGS = 10 V, ID = 100 A 2.0 2.3 m Ω gfs Transconductance VDS = 8 V, ID = 100 A 297 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 9380 12200 pF Coss Output capacitance 2260 2940 pF Crss Reverse transfer capacitance 42 55 pF RG Series gate resistance 1.3 2.6 Ω Qg Gate charge total (10 V) VDS = 40 V, ID = 100 A 120 156 nC Qgd Gate charge gate-to-drain 20 nC Qgs Gate charge gate-to-source 37 nC Qg(th) Gate charge at Vth 25 nC Qoss Output charge VDS = 40 V, VGS = 0 V 345 nC td(on) Turn on delay time VDS = 40 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω 14 ns tr Rise time 7 ns td(off) Turn off delay time 30 ns tf Fall time 5 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V Qrr Reverse recovery charge VDS= 40 V, IF = 100 A, di/dt = 300 A/ μs 525 nC trr Reverse recovery time 107 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.4 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W |
类似零件编号 - CSD19506KTTT |
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类似说明 - CSD19506KTTT |
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