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CSD18535KTTT 数据表(PDF) 6 Page - Texas Instruments |
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CSD18535KTTT 数据表(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (qC) -50 -25 0 25 50 75 100 125 150 175 200 0 40 80 120 160 200 240 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 DC 10 ms 1 ms 100 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 10 100 500 D011 TC = 25q C TC = 125q C 6 CSD18535KTT SLPS589 – MARCH 2016 www.ti.com Product Folder Links: CSD18535KTT Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Single Pulse, Max RθJC = 0.5°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature |
类似零件编号 - CSD18535KTTT |
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类似说明 - CSD18535KTTT |
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