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2P4M 数据表(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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2P4M 数据表(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 3 page DESCRIPTION: MAIN FEATURES Symbol Value Unit IT(RMS) 2 A IGT ≤200 μA VTM ≤1.5 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-110 ℃ Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current IT(RMS) 2 A @ (TC=72℃) Non repetitive surge peak on-state current (tp=10ms) ITSM 20 A I 2t value for fusing (tp=10ms) I 2t 2 A 2s Critical rate of rise of on-state current dI/dt 50 A /μs Peak gate current (tp=20 μs, Tj=110℃) IGM 0.2 A Peak gate power (tp=20 μs, Tj=110℃) PGM 0.5 W Average gate power dissipation(Tj=110℃) PG(AV) 0.1 W A(2) K(1) G(3) RGK ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc.. Internal structure TO-202 Pkg Outline 1 2 3 ® 2P4M Pb Free Plating Product 2P4M 2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR Pb © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3 Rev.05 |
类似零件编号 - 2P4M |
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类似说明 - 2P4M |
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