OBSOLETE

54ABT541

SNOS046B – AUGUST 1998 – REVISED APRIL 2013

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Truth Table

(1)

Inputs

Outputs

I

ABT541

L

L

H

H

H

X

X

Z

X

H

X

Z

L

L

L

L

(1)

H = HIGH Voltage Level

L = LOW Voltage Level

X = Immaterial

Z = High Impedance

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

Storage Temperature

−65°C to +150°C

Ambient Temperature under Bias

−55°C to +125°C

Junction Temperature under Bias

CDIP

−55°C to +175°C

−0.5V to +7.0V

−0.5V to +7.0V

−30 mA to +5.0 mA

Voltage Applied to Any Output

in the Disabled or Power-Off State

−0.5V to 5.5V

in the HIGH State

Current Applied to Output

in LOW State (Max)

DC Latchup Source Current

−500 mA

Over Voltage Latchup (I/O)

10V

(1)

Absolute Maximum Ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation

under these conditions is not implied.

(2)

Either voltage limit or current limit is sufficient to protect inputs.

Recommended Operating Conditions

Free Air Ambient Temperature

Military

−55°C to +125°C

Supply Voltage

Military

+4.5V to +5.5V

Minimum Input Edge Rate (

ΔV/Δt)

Data Input

50 mV/ns

Enable Input

20 mV/ns

2

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