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IRF640B 数据表(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF640B 数据表(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 9 page  (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Electrical Characteristics T Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.2 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 10 µA VDS = 160 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 9.0 A -- 0.145 0.18 Ω gFS Forward Transconductance VDS = 40 V, ID = 9.0 A -- 13 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1300 1700 pF Coss Output Capacitance -- 175 230 pF Crss Reverse Transfer Capacitance -- 45 60 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 100 V, ID = 18 A, RG = 25 Ω -- 20 50 ns tr Turn-On Rise Time -- 145 300 ns td(off) Turn-Off Delay Time -- 145 300 ns tf Turn-Off Fall Time -- 110 230 ns Qg Total Gate Charge VDS = 160 V, ID = 18 A, VGS = 10 V -- 45 58 nC Qgs Gate-Source Charge -- 6.5 -- nC Qgd Gate-Drain Charge -- 22 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs -- 195 -- ns Qrr Reverse Recovery Charge -- 1.47 -- µC |
类似零件编号 - IRF640B |
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类似说明 - IRF640B |
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