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SPW12N50C3 数据表(PDF) 4 Page - Infineon Technologies AG |
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SPW12N50C3 数据表(HTML) 4 Page - Infineon Technologies AG |
4 / 11 page 2003-06-30 Page 4 SPW12N50C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 11.6 A Inverse diode direct current, pulsed ISM - - 34.8 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 380 - ns Reverse recovery charge Qrr - 5.5 - µC Peak reverse recovery current Irrm - 38 - A Peak rate of fall of reverse recovery current dirr/dt - 1100 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.015 K/W Rth2 0.03 Rth3 0.056 Rth4 0.197 Rth5 0.216 Rth6 0.083 Thermal capacitance Cth1 0.0001878 Ws/K Cth2 0.0007106 Cth3 0.000988 Cth4 0.002791 Cth5 0.007285 Cth6 0.063 External H eatsink Tj Tcase Tamb Cth1 Cth2 R th1 Rth,n Cth,n Ptot (t) |
类似零件编号 - SPW12N50C3 |
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类似说明 - SPW12N50C3 |
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