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SPI80N03S2L-06 数据表(PDF) 3 Page - Infineon Technologies AG |
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SPI80N03S2L-06 数据表(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-05-09 Page 3 SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=80A 44 88 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 1900 2530 pF Output capacitance Coss - 740 990 Reverse transfer capacitance Crss - 175 265 Turn-on delay time td(on) VDD=15V, VGS =10V, ID=20A, RG=3.6Ω - 10 15 ns Rise time tr - 23 35 Turn-off delay time td(off) - 73 109 Fall time tf - 61 91 Gate Charge Characteristics Gate to source charge Qgs VDD=24V, ID=80A - 6 8 nC Gate to drain charge Qgd - 18 27 Gate charge total Qg VDD=24V, ID=80A, VGS=0 to 10V - 51 68 Gate plateau voltage V(plateau) VDD=24V, ID=80A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=15V, IF=lS, diF/dt=100A/µs - 41 52 ns Reverse recovery charge Qrr - 46 58 nC |
类似零件编号 - SPI80N03S2L-06 |
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类似说明 - SPI80N03S2L-06 |
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