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SPI21N10 数据表(PDF) 7 Page - Infineon Technologies AG

部件名 SPI21N10
功能描述  SIPMOS Power-Transistor
Download  8 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI21N10 数据表(HTML) 7 Page - Infineon Technologies AG

  SPI21N10 Datasheet HTML 1Page - Infineon Technologies AG SPI21N10 Datasheet HTML 2Page - Infineon Technologies AG SPI21N10 Datasheet HTML 3Page - Infineon Technologies AG SPI21N10 Datasheet HTML 4Page - Infineon Technologies AG SPI21N10 Datasheet HTML 5Page - Infineon Technologies AG SPI21N10 Datasheet HTML 6Page - Infineon Technologies AG SPI21N10 Datasheet HTML 7Page - Infineon Technologies AG SPI21N10 Datasheet HTML 8Page - Infineon Technologies AG  
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2002-01-31
Page 7
Preliminary data
SPI21N10
SPP21N10,SPB21N10
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 21 A , VDD = 25 V, RGS = 25

25
45
65
85
105
125
145
°C
185
Tj
0
10
20
30
40
50
60
70
80
90
100
110
120
mJ
140
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 21 A pulsed
0
5
10
15
20
25
30
35
40 nC
50
QGate
0
2
4
6
8
10
12
V
16
SPP21N10
0,8 V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60
-20
20
60
100
140
°C
200
Tj
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
SPP21N10


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