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ACE2006M 数据表(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2006M 数据表(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE2006M N-Channel 60-V MOSFET VER 1.1 1 Description ACE2006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low r DS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID 19 A Pulsed Drain Current b IDM 75 A Continuous Source Current (Diode Conduction) a IS 42 A Power Dissipation TC=25°C PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction-to-Ambient a RθJA 40 °C/W Maximum Junction-to-Case RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics. b. Pulse width limited by maximum junction temperature. |
类似零件编号 - ACE2006M |
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类似说明 - ACE2006M |
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